The IPB180N04S3-02 is a high-power N-channel MOSFET from Infineon with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 300W and a maximum drain to source breakdown voltage of 40V. The device is packaged in a TO-263-7 package and is lead-free and halogen-free. It is compliant with RoHS regulations and is part of the OptiMOS series.
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Infineon IPB180N04S3-02 technical specifications.
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 14.3nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 1.5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 57ns |
| Turn-On Delay Time | 35ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB180N04S3-02 to view detailed technical specifications.
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