N-channel power MOSFET featuring 40V drain-source breakdown voltage and 180A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 1.1mΩ Rds On resistance. Operating across a wide temperature range from -55°C to 175°C, it boasts a maximum power dissipation of 250W. The component is housed in a TO-263-7 package and is supplied on tape and reel.
PackageTO-263-7
PolarityN-CHANNEL
Power250W
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Technical Specifications
Infineon IPB180N04S4H0ATMA1 technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.1mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 49ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 17.94nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 1.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 44ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB180N04S4H0ATMA1 Datasheet
Download the complete datasheet for Infineon IPB180N04S4H0ATMA1 to view detailed technical specifications.
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