N-channel Power MOSFET, 60V drain-source breakdown voltage, 180A continuous drain current, and 1.7mΩ Rds On. Features a TO-263-7 package, 250W power dissipation, and operates from -55°C to 175°C. This silicon Metal-Oxide Semiconductor FET offers fast switching with turn-on delay of 30ns and fall time of 15ns. Halogen and lead-free, RoHS compliant, and supplied on tape and reel.
PackageTO-263-7
PolarityN-CHANNEL
Power250W
Quick Jump:
Technical Specifications
Infineon IPB180N06S4H1ATMA1 technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 21.9nF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 1.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 30ns |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB180N06S4H1ATMA1 Datasheet
Download the complete datasheet for Infineon IPB180N06S4H1ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
