N-Channel Power MOSFET, 60V Vds, 180A continuous drain current, and 1.7mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-263-7 surface mount package, 250W power dissipation, and a maximum operating temperature of 175°C. Ideal for automotive applications, it offers fast switching with turn-on delay of 30ns and fall time of 15ns.
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Infineon IPB180N06S4H1ATMA2 technical specifications.
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Resistance | 1.7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 21.9nF |
| Lead Free | Contains Lead |
| Length | 10.31mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 1.7mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 1.7mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.056438oz |
| Width | 9.45mm |
| RoHS | Compliant |
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