N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a continuous drain current (I(D)) of 180A and a drain-source voltage (V(DS)) of 80V. Offers a low on-resistance of 0.0022 ohms. This single-element device is housed in a TO-263 package with 6 terminals.
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Technical Specifications
Infineon IPB180N08S402ATMA1 technical specifications.
General
| Number of Terminals | 6 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPB180N08S402ATMA1 Datasheet
Download the complete datasheet for Infineon IPB180N08S402ATMA1 to view detailed technical specifications.
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