The IPB180P04P4L02ATMA1 is a high-power N-channel MOSFET from Infineon, featuring a continuous drain current of 180A and a maximum drain to source voltage of -40V. It has a maximum power dissipation of 150W and operates over a temperature range of -55°C to 175°C. The device is packaged in a TO-263-7 plastic package and is suitable for surface mount applications. It is also RoHS compliant and halogen free.
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Infineon IPB180P04P4L02ATMA1 technical specifications.
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Resistance | 1.8mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 119ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 18.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| On-State Resistance | 2.4mR |
| Package Quantity | 1000 |
| Packaging | Cut Tape |
| Power Dissipation | 150W |
| Rds On Max | 2.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 146ns |
| Turn-On Delay Time | 32ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB180P04P4L02ATMA1 to view detailed technical specifications.
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