Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Infineon IPB200N15N3G technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 1.82nF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 14ns |
| Width | 9.45mm |
| RoHS | Compliant |
No datasheet is available for this part.
