The IPB200N15N3GATMA1 is a 150V 50A N-Channel MOSFET packaged in a TO-263 surface mount package. It operates over a temperature range of -55°C to 175°C and is RoHS compliant. The device has a maximum power dissipation of 150W and a maximum on-state resistance of 20mR.
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Infineon IPB200N15N3GATMA1 technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.82nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 20mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 14ns |
| RoHS | Compliant |
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