N-channel power MOSFET for surface mount applications. Features 30V drain-source breakdown voltage, 22A continuous drain current, and low 14.6mΩ on-state resistance. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 31W. Packaged in a TO-263-3 surface mount package, this RoHS compliant component offers fast switching with 3ns turn-on and 12ns turn-off delay times.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPB22N03S4L15ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPB22N03S4L15ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 4.7mm |
| Input Capacitance | 980pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 14.6mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 31W |
| Rds On Max | 14.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 3ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB22N03S4L15ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
