N-channel power MOSFET featuring 100V drain-source breakdown voltage and 35A continuous drain current. This surface-mount device offers a low on-state resistance of 26.3mΩ at a 10V gate-source voltage. Operating across a wide temperature range from -55°C to 175°C, it boasts a maximum power dissipation of 71W. The TO-263-3 package facilitates efficient heat management, with typical switching times including a 6ns turn-on delay and 3ns fall time.
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Infineon IPB35N10S3L26ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 26.3mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 2.7nF |
| Lead Free | Contains Lead |
| Length | 10.31mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 26.3mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 71W |
| Rds On Max | 26.3mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 6ns |
| Width | 9.45mm |
| RoHS | Compliant |
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