N-channel power MOSFET in a TO-263 surface-mount package. Features 60V drain-to-source breakdown voltage (Vdss) and a maximum continuous drain current (ID) of 45A. Offers low on-resistance (Rds On Max) of 9.1mΩ, enabling efficient power handling with a maximum power dissipation of 71W. Operates across a wide temperature range from -55°C to 175°C, with fast switching characteristics including a 5ns fall time.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power71W
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Technical Specifications
Infineon IPB45N06S409ATMA1 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 9.2mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.4mm |
| Input Capacitance | 3.785nF |
| Length | 10mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 71W |
| Rds On Max | 9.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Width | 9.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB45N06S409ATMA1 Datasheet
Download the complete datasheet for Infineon IPB45N06S409ATMA1 to view detailed technical specifications.
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