N-channel power MOSFET featuring 60V drain-source voltage and 45A continuous drain current. This surface-mount device offers a low 9.2mΩ drain-to-source resistance. Designed for automotive applications with AEC-Q101 qualification, it operates from -55°C to 175°C and supports a maximum power dissipation of 71W. The TO-263-3 package facilitates efficient thermal management.
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Infineon IPB45N06S409ATMA2 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Resistance | 9.2mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 3.785nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 9.4mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.068654oz |
| Width | 9.25mm |
| RoHS | Compliant |
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