The IPB45N06S4L08ATMA2 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current of 45A and a drain to source voltage of 60V. The device features a drain to source resistance of 7.9mΩ and a gate to source voltage of 16V. The TO-263-3 package is suitable for high-power applications with a maximum power dissipation of 71W.
Infineon IPB45N06S4L08ATMA2 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Resistance | 7.9mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.4mm |
| Input Capacitance | 3.68nF |
| Length | 10mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | No |
| Series | IPB45N06 |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.068654oz |
| Width | 9.25mm |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon IPB45N06S4L08ATMA2 to view detailed technical specifications.
No datasheet is available for this part.