The IPB47N10SL26ATMA1 is a SIPMOS MOSFET from Infineon, featuring a maximum drain current of 47A and a maximum drain to source voltage of 100V. It has a maximum power dissipation of 175W and a maximum operating temperature of 175°C. The device is packaged in a TO-263-3 case and is suitable for surface mount applications. It is also RoHS compliant and halogen free.
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Infineon IPB47N10SL26ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.5nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 175W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 175W |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-On Delay Time | 50ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB47N10SL26ATMA1 to view detailed technical specifications.
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