Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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Infineon IPB50CN10NGATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 1.09nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| RoHS | Not Compliant |
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