N-channel power MOSFET featuring 100V drain-source breakdown voltage and 50A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 15.4mΩ on-state resistance and 100W power dissipation. Designed for demanding applications, it operates within a temperature range of -55°C to 175°C and is packaged in a TO-263-3 surface-mount package. Key switching characteristics include a 10ns turn-on delay and 5ns fall time.
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Infineon IPB50N10S3L16ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15.4mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.4mm |
| Input Capacitance | 4.18nF |
| Lead Free | Contains Lead |
| Length | 10mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| On-State Resistance | 15.4mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 15.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 10ns |
| Width | 9.25mm |
| RoHS | Compliant |
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