N-Channel Power MOSFET featuring 550V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 199mΩ at a nominal gate-source voltage of 3V. Designed for efficient switching, it exhibits a fall time of 10ns and turn-on delay of 35ns. Packaged in a TO-263-3 surface-mount plastic package, this component operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 139W.
PackageTO-263-3
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Technical Specifications
Infineon IPB50R199CPATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 550V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.572mm |
| Input Capacitance | 1.8nF |
| Lead Free | Contains Lead |
| Length | 10.31mm |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Nominal Vgs | 3V |
| On-State Resistance | 199mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 199mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
| Width | 9.45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB50R199CPATMA1 Datasheet
Download the complete datasheet for Infineon IPB50R199CPATMA1 to view detailed technical specifications.
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