N-Channel Power MOSFET featuring 550V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 199mΩ at a nominal gate-source voltage of 3V. Designed for efficient switching, it exhibits a fall time of 10ns and turn-on delay of 35ns. Packaged in a TO-263-3 surface-mount plastic package, this component operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 139W.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPB50R199CPATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPB50R199CPATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 550V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.572mm |
| Input Capacitance | 1.8nF |
| Lead Free | Contains Lead |
| Length | 10.31mm |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Nominal Vgs | 3V |
| On-State Resistance | 199mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 199mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
| Width | 9.45mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB50R199CPATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
