N-Channel Power MOSFET featuring 550V drain-source breakdown voltage and 12A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 299mΩ drain-source resistance. Designed for surface-mount applications in a TO-263 package, it boasts a maximum power dissipation of 104W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 12ns fall time, 80ns turn-off delay, and 35ns turn-on delay.
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Infineon IPB50R299CPATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 550V |
| Drain to Source Resistance | 299mR |
| Drain to Source Voltage (Vdss) | 550V |
| Dual Supply Voltage | 550V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.572mm |
| Input Capacitance | 1.19nF |
| Length | 10.31mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Nominal Vgs | 3V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 104W |
| Rds On Max | 299mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
| Width | 9.45mm |
| RoHS | Compliant |
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