N-channel Power MOSFET, 150V drain-source breakdown voltage, 21A continuous drain current, and 53mΩ Rds On. Features include a 175°C max operating temperature, 68W power dissipation, and fast switching speeds with a 9ns turn-on delay and 3ns fall time. This silicon Metal-oxide Semiconductor FET is housed in a TO-263-3 package, is lead-free, halogen-free, and RoHS compliant.
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Infineon IPB530N15N3GATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 53mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 887pF |
| Lead Free | Lead Free |
| Length | 10.31mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 68W |
| Rds On Max | 53mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 9ns |
| Width | 9.45mm |
| RoHS | Compliant |
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