N-Channel Power MOSFET, 250V Vdss, 25A Continuous Drain Current, and 60mΩ Rds On. This silicon Metal-Oxide-Semiconductor FET features a TO-263-3 surface mount package, 136W max power dissipation, and a maximum operating temperature of 175°C. Key switching characteristics include 8ns fall time, 10ns turn-on delay, and 22ns turn-off delay. It is RoHS compliant and Halogen Free.
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Infineon IPB600N25N3GATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.35nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 250V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Mount | Surface Mount |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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