N-channel Power MOSFET, 600V drain-source voltage, 37.9A continuous drain current, and 99mΩ drain-source resistance at 10V. Features CoolMOS process technology, single element configuration, and a 3-pin D2PAK (TO-263) surface-mount package. Maximum power dissipation is 278W, with operating temperatures ranging from -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Infineon IPB60R099C6 technical specifications.
General
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.31(Max) |
| Package Width (mm) | 9.45(Max) |
| Package Height (mm) | 4.57(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 37.9A |
| Maximum Drain Source Resistance | 99@10VmOhm |
| Typical Gate Charge @ Vgs | 119@10VnC |
| Typical Gate Charge @ 10V | 119nC |
| Typical Input Capacitance @ Vds | 2660@100VpF |
| Maximum Power Dissipation | 278000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPB60R099C6 Datasheet
Download the complete datasheet for Infineon IPB60R099C6 to view detailed technical specifications.
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