Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Infineon IPB60R099C6ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 37.9A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.66nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 278W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Rds On Max | 99mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 15ns |
| RoHS | Compliant |
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