N-channel Power MOSFET, 600V drain-source voltage, 31A continuous drain current, and 105mΩ on-state resistance. This silicon, metal-oxide semiconductor FET features a TO-263 surface-mount package, 255W maximum power dissipation, and a nominal gate-source voltage of 3V. Operating temperature range is -40°C to 150°C, with 10ns turn-on and 60ns turn-off delay times. It is RoHS compliant and supplied on tape and reel.
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Infineon IPB60R099CPAATMA1 technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 2.8nF |
| Lead Free | Contains Lead |
| Length | 10.31mm |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 255W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| On-State Resistance | 105mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 255W |
| Rds On Max | 105mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 10ns |
| Width | 9.45mm |
| RoHS | Compliant |
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