N-channel silicon power MOSFET, 600V drain-source voltage, 31A continuous drain current, and 0.099 ohm on-resistance. This single-element Metal-oxide Semiconductor FET features a TO-263 package for surface mounting and supports a maximum operating temperature of 150°C. It is RoHS compliant and Halogen Free, designed for demanding power applications.
PackageTO-263
MountingSurface Mount
Power255W
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Technical Specifications
Infineon IPB60R099CPATMA1 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 255W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB60R099CPATMA1 Datasheet
Download the complete datasheet for Infineon IPB60R099CPATMA1 to view detailed technical specifications.
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