Infineon
IPB60R120P7ATMA1
Power Field-Effect Transistor, 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
Power Field-Effect Transistor, 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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Technical Specifications
Infineon IPB60R120P7ATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPB60R120P7ATMA1 Datasheet
Download the complete datasheet for Infineon IPB60R120P7ATMA1 to view detailed technical specifications.
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