N-Channel Power MOSFET, 600V Vdss, 21A continuous drain current, and 0.165 ohm Rds(on). This single-element silicon Metal-Oxide-Semiconductor FET features a TO-263 package for surface mounting. It offers a maximum operating temperature of 150°C, a 192W power dissipation, and is RoHS compliant. Key switching characteristics include a 5ns fall time, 12ns turn-on delay, and 50ns turn-off delay.
PackageTO-263
MountingSurface Mount
Power192W
Quick Jump:
Technical Specifications
Infineon IPB60R165CPATMA1 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 192W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB60R165CPATMA1 Datasheet
Download the complete datasheet for Infineon IPB60R165CPATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
