This device is a 600 V N-channel superjunction power MOSFET in Infineon's CoolMOS™ P7 family. It is specified for 18 A continuous drain current, 180 mΩ maximum RDS(on), and 72 W total power dissipation. The device is offered in a D2PAK package with 3 pins and supports SMT assembly. It operates over a junction temperature range of -55 °C to 150 °C and features low gate charge with a typical total gate charge of 25 nC. Infineon positions it as a successor to the 600 V CoolMOS™ P6 series for high-efficiency hard-switching and resonant topologies.
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Infineon IPB60R180P7 technical specifications.
| Min Operating Temperature | -55 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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