N-channel Power MOSFET featuring 600V drain-source voltage and 0.18 ohm on-resistance. This single-element silicon Metal-oxide Semiconductor FET is housed in a TO-263AB (D2PAK-3/2) package. Designed for high-power applications, it offers a minimum operating temperature of -55°C.
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Infineon IPB60R180P7ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Infineon IPB60R180P7ATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPB60R180P7ATMA1 Datasheet
Download the complete datasheet for Infineon IPB60R180P7ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.