N-channel Power MOSFET featuring 600V drain-source voltage and 0.18 ohm on-resistance. This single-element silicon Metal-oxide Semiconductor FET is housed in a TO-263AB (D2PAK-3/2) package. Designed for high-power applications, it offers a minimum operating temperature of -55°C.
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Technical Specifications
Infineon IPB60R180P7ATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPB60R180P7ATMA1 Datasheet
Download the complete datasheet for Infineon IPB60R180P7ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.