N-Channel Power MOSFET featuring 650V drain-source voltage and 16A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 199mΩ Rds(on) at a nominal 3V Vgs. Designed for surface-mount applications with a TO-263-3 package, it boasts a maximum power dissipation of 139W and operates across a wide temperature range from -55°C to 150°C. The component is RoHS compliant and halogen-free, with typical turn-on delay of 10ns and turn-off delay of 50ns.
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Infineon IPB60R199CPATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 650V |
| Dual Supply Voltage | 650V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.52nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 199mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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