Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Infineon IPB60R199CPAXT technical specifications.
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
