N-channel silicon MOSFET featuring 600V drain-source voltage and 0.28 ohm on-resistance. This single-element, 2-terminal power transistor is housed in a TO-263AB (D2PAK-3/2) package. It operates across a wide temperature range from -55°C to 150°C.
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Technical Specifications
Infineon IPB60R280P7ATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPB60R280P7ATMA1 Datasheet
Download the complete datasheet for Infineon IPB60R280P7ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.