Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Infineon IPB60R299CP technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 11A |
| Dual Supply Voltage | 650V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 299mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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