The IPB60R299CPA is a high-power N-channel MOSFET with a breakdown voltage of 600V and a continuous drain current of 11A. It has a drain to source resistance of 299mR and a power dissipation of 96W. The device is packaged in a small outline R-PSSO-G2 package and is available on tape and reel. It operates over a temperature range of -55°C to 150°C and is RoHS compliant.
PolarityN-CHANNEL
Power96W
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Technical Specifications
Infineon IPB60R299CPA technical specifications.
General
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 299mR |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 96W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB60R299CPA Datasheet
Download the complete datasheet for Infineon IPB60R299CPA to view detailed technical specifications.
No datasheet is available for this part.
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