IPB60R360P7

This device is a 600 V N-channel CoolMOS P7 power MOSFET in a PG-TO 263-3 D²PAK package. It has a maximum drain-source on-resistance of 360 mΩ, supports 9 A continuous drain current at 25°C case temperature, and is rated for 41 W power dissipation. The MOSFET operates over a junction temperature range of -55°C to 150°C and provides typical total gate charge of 13 nC with 555 pF input capacitance. Its reverse-diode characteristics include 145 ns typical reverse recovery time and 0.74 µC reverse recovery charge. The part is intended for hard- and soft-switching stages including PFC, PWM, and resonant converter applications.