N-channel Power MOSFET, 600V drain-source voltage, 10.6A continuous drain current. Features 380mOhm maximum drain-source resistance at 10V, 32nC typical gate charge, and 700pF typical input capacitance. Packaged in a D2PAK (TO-263) surface-mount configuration with a single element per chip. Operates from -55°C to 150°C with 83W maximum power dissipation.
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Infineon IPB60R380C6 technical specifications.
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.31(Max) |
| Package Width (mm) | 9.45(Max) |
| Package Height (mm) | 4.57(Max) |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS C6 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 10.6A |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 380@10VmOhm |
| Typical Gate Charge @ Vgs | 32@10VnC |
| Typical Gate Charge @ 10V | 32nC |
| Typical Input Capacitance @ Vds | 700@100VpF |
| Maximum Power Dissipation | 83000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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