N-Channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 9A Continuous Drain Current, and 385mΩ Drain to Source Resistance. Features include a 3V Threshold Voltage, 1.9nF Input Capacitance, and 125W Max Power Dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-263-3 package, offering fast switching speeds with a 10ns Turn-On Delay Time and 5ns Fall Time. It operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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Infineon IPB60R385CP technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 385mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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