The IPB60R950C6ATMA1 is a 600V power MOSFET from Infineon with a maximum continuous drain current of 4.4A. It features a TO-263-3 package and is designed for surface mount applications. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. It has a maximum power dissipation of 37W and a maximum dual supply voltage of 600V.
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Infineon IPB60R950C6ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 280pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 950mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB60R950C6ATMA1 to view detailed technical specifications.
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