
The IPB64N25S320ATMA1 is a surface mount MOSFET from Infineon with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 300W and a maximum drain to source voltage of 250V. The device features a drain to source resistance of 17.5mR and a gate to source voltage of 20V. It is also RoHS compliant and halogen free.
Infineon IPB64N25S320ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 64A |
| Drain to Source Resistance | 17.5mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 250V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 300W |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 18ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB64N25S320ATMA1 to view detailed technical specifications.
No datasheet is available for this part.
