N-channel Power MOSFET featuring 650V drain-source voltage and 31.2A continuous drain current. This surface-mount device utilizes CoolMOS technology and is housed in a D2PAK (TO-263) package with gull-wing leads. Key specifications include a maximum gate threshold voltage of 4.5V and a low drain-source on-resistance of 110 mOhm at 10V. The single element configuration offers a maximum power dissipation of 277.8W and operates across a temperature range of -40°C to 150°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Infineon IPB65R110CFDA technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-263 |
| Package/Case | D2PAK |
| Package Description | Double Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.31(Max) |
| Package Width (mm) | 9.45(Max) |
| Package Height (mm) | 4.57(Max) |
| Seated Plane Height (mm) | 4.82(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 31.2A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 110@10VmOhm |
| Typical Gate Charge @ Vgs | 118@10VnC |
| Typical Gate Charge @ 10V | 118nC |
| Typical Input Capacitance @ Vds | 3240@100VpF |
| Maximum Power Dissipation | 277800mW |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IPB65R110CFDA Datasheet
Download the complete datasheet for Infineon IPB65R110CFDA to view detailed technical specifications.
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