N-channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a 650V drain-source voltage and a continuous drain current of 31.2A. Offers a low on-resistance of 0.11 ohms. Packaged in a TO-263 surface-mount package, this component supports high power dissipation up to 277.8W. It operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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Infineon IPB65R110CFDATMA1 technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 31.2A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.45mm |
| Input Capacitance | 3.24nF |
| Lead Free | Contains Lead |
| Length | 10.31mm |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 277.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 16ns |
| Width | 4.57mm |
| RoHS | Compliant |
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