N-Channel Power MOSFET, 650V Vdss, 18A Continuous Drain Current (ID), and 125mR Rds On. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package, 101W max power dissipation, and a max operating temperature of 150°C. It offers fast switching with an 8ns fall time and 14ns turn-on delay. Halogen-free and RoHS compliant, this component is supplied in tape and reel packaging.
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Infineon IPB65R125C7ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.67nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 101W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C7 |
| Turn-Off Delay Time | 71ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.068654oz |
| RoHS | Compliant |
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