INFINEON

IPB65R125C7ATMA1

Datasheet

650V 18A N-Channel MOSFET, 125mR Rds On, TO-263

Infineon

IPB65R125C7ATMA1

Name: IPB65R125C7ATMA1 Infineon
Brand: Infineon
SKU: IPB65R125C7ATMA1

650V 18A N-Channel MOSFET, 125mR Rds On, TO-263

N-Channel Power MOSFET, 650V Vdss, 18A Continuous Drain Current (ID), and 125mR Rds On. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package, 101W max power dissipation, and a max operating temperature of 150°C. It offers fast switching with an 8ns fall time and 14ns turn-on delay. Halogen-free and RoHS compliant, this component is supplied in tape and reel packaging.

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Infineon IPB65R125C7ATMA1 technical specifications.

General

Package/Case	TO-263-3
Continuous Drain Current (ID)	18A
Drain to Source Resistance	125mR
Drain to Source Voltage (Vdss)	650V
Fall Time	8ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	1.67nF
Lead Free	Contains Lead
Max Dual Supply Voltage	650V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	101W
Mount	Surface Mount
Number of Channels	1
Package Quantity	1000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Rds On Max	125mR
RoHS Compliant	Yes
Series	CoolMOS™ C7
Turn-Off Delay Time	71ns
Turn-On Delay Time	14ns
Weight	0.068654oz