The IPB65R150CFDAATMA1 is a 650V power MOSFET with a maximum continuous drain current of 22.4A. It features a TO-263-3 package and is designed for surface mount applications. The device operates over a temperature range of -40°C to 150°C and is compliant with AEC-Q101 and RoHS standards. The MOSFET has a maximum power dissipation of 195.3W and an on-state resistance of 150mR.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPB65R150CFDAATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPB65R150CFDAATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 22.4A |
| Drain to Source Voltage (Vdss) | 650V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.34nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 195.3W |
| Mount | Surface Mount |
| On-State Resistance | 150mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 195.3W |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB65R150CFDAATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
