650 V N-channel superjunction power MOSFET in the CoolMOS™ C7 family. It is specified for 13 A continuous drain current, 190 mΩ maximum RDS(on) at 10 V, and 72 W power dissipation. The device is supplied in a D2PAK / PG-TO263-3-2 surface-mount package with 23 nC typical gate charge and an operating temperature range of -55 °C to 150 °C. The listed orderable part IPB65R190C7ATMA2 is offered in tape-and-reel packaging with a standard pack quantity of 1000.
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Infineon IPB65R190C7 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
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