N-Channel Power MOSFET, 650V drain-source breakdown voltage, 17.5A continuous drain current, and 0.19 ohm drain-source resistance. Features a 4.57mm height, 10.31mm length, and 9.45mm width in a TO-263-3 package. Operates from -55°C to 150°C with a maximum power dissipation of 165W. Includes 12ns turn-on delay and 6.4ns fall time.
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Infineon IPB65R190CFD technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 17.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 6.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 13.06nF |
| Length | 10.31mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 165W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 151W |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 53.2ns |
| Turn-On Delay Time | 12ns |
| Width | 9.45mm |
| RoHS | Compliant |
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