
The IPB65R190CFDAATMA1 is a surface mount power MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a maximum drain to source voltage of 650V and a continuous drain current of 17.5A. The device is packaged in a TO-263-3 case and is available in a tape and reel packaging format. The MOSFET is compliant with RoHS regulations and is part of the Automotive, AEC-Q101, CoolMOS series.
Infineon IPB65R190CFDAATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 17.5A |
| Drain to Source Voltage (Vdss) | 650V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.85nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 151W |
| Mount | Surface Mount |
| On-State Resistance | 190mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 151W |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPB65R190CFDAATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
