IPB65R225C7ATMA1

N-Channel Power MOSFET, 650V Drain to Source Breakdown Voltage, 11A Continuous Drain Current, and 225mΩ Drain to Source Resistance. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package, 63W maximum power dissipation, and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 30V Gate to Source Voltage, 996pF input capacitance, 10ns fall time, 9ns turn-on delay, and 48ns turn-off delay. This component is RoHS compliant and Halogen Free.