N-Channel Power MOSFET, 650V Drain to Source Breakdown Voltage, 11A Continuous Drain Current, and 225mΩ Drain to Source Resistance. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package, 63W maximum power dissipation, and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 30V Gate to Source Voltage, 996pF input capacitance, 10ns fall time, 9ns turn-on delay, and 48ns turn-off delay. This component is RoHS compliant and Halogen Free.
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Infineon IPB65R225C7ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 225mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Halogen Free |
| Input Capacitance | 996pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 225mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C7 |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.139332oz |
| RoHS | Compliant |
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