N-channel power MOSFET featuring 650V drain-source breakdown voltage and 280mΩ Rds(on) for efficient power switching. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 13.8A and a maximum power dissipation of 104W. Designed with a TO-263-3 package, it boasts fast switching speeds with a fall time of 12ns and turn-on delay of 13ns. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is supplied in tape and reel packaging.
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Infineon IPB65R280C6ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 13.8A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 4.57mm |
| Input Capacitance | 950pF |
| Length | 10.31mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 104W |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 105ns |
| Turn-On Delay Time | 13ns |
| Width | 9.45mm |
| RoHS | Compliant |
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