N-channel power MOSFET, 650V drain-source voltage, 280mΩ drain-source resistance, and 13.8A continuous drain current. Features include 9ns fall time, 11ns turn-on delay, and 76ns turn-off delay. This silicon, metal-oxide semiconductor FET is housed in a TO-263-3 surface-mount package, offering a maximum power dissipation of 104W and operating temperature range of -55°C to 150°C. It is RoHS compliant and halogen-free.
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Infineon IPB65R280E6ATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 13.8A |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Halogen Free |
| Input Capacitance | 950pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 280mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ E6 |
| Turn-Off Delay Time | 76ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.068654oz |
| RoHS | Compliant |
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