The IPB65R310CFDAATMA1 is a surface mount power MOSFET from Infineon with a maximum operating temperature range of -40°C to 150°C. It features a maximum drain to source voltage of 650V and a continuous drain current of 11.4A. The device has a maximum power dissipation of 104.2W and an on-state resistance of 310mR. It is packaged in a TO-263-3 package and is compliant with AEC-Q101 and RoHS standards.
PackageTO-263-3
MountingSurface Mount
Power104.2W
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Technical Specifications
Infineon IPB65R310CFDAATMA1 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 11.4A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.11nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 104.2W |
| Mount | Surface Mount |
| On-State Resistance | 310mR |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 104.2W |
| Rds On Max | 310mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPB65R310CFDAATMA1 Datasheet
Download the complete datasheet for Infineon IPB65R310CFDAATMA1 to view detailed technical specifications.
No datasheet is available for this part.