N-Channel Power MOSFET, 650V Drain-Source Breakdown Voltage, 11.4A Continuous Drain Current, and 310mΩ On-State Resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-263-3 package, 104.2W maximum power dissipation, and operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 11ns turn-on delay and a 7ns fall time. The component is RoHS compliant and Halogen Free.
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Infineon IPB65R310CFDATMA1 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 11.4A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 310mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.1nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104.2W |
| On-State Resistance | 310mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 104.2W |
| Radiation Hardening | No |
| Rds On Max | 310mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
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